BFW43 Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH VOLTAGE AMPLIFIER

BFW43
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
PNP SILICON TRANSISTOR
FEATURES
0.48 (0.019)
0.41 (0.016)
dia.
• PNP High Voltage Planar Transistor
2.54 (0.100)
Nom.
• Hermetic TO18 Package
31
2
• Full Screening Options Available
TO–18 METAL PACKAGE
Underside View
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage
-150V
V_CEO
Collector – Emitter Voltage (I_B = 0)
-150V
V_EBO
Emitter – Base Voltage (I_B = 0)
-6V
I_C
Collector Current
0.1A
P_D
Total Device Dissipation T_A = 25 °C
0.4W
P_D
Total Device Dissipation T_C = 25 °C
1.4W
T_stg
Storage Temperature
–55 to 200°C
T_J
Max Operating Junction Temperature
200°C
R_θJA
R_θJC
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
438°C/W
125°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 5989
Issue 1