BFC61 Datasheet, PDF (1/2 Pages) Seme LAB – 4TH GENERATION MOSFET

SEME
LAB
TO220–AC Package Outline.
Dimensions in mm (inches)
10.67 (0.420)
9.65 (0.380)
5.33 (0.210)
2
4.83 (0.190)
4.83 (0.190)
3.56 (0.140)
1.40 (0.020)
0.51 (0.055)
3.05 (0.120)
2.54 (1.000)
3.73 (0.147)
3.53 (0.139) ^Dia.
BFC61
4TH GENERATION MOSFET
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
123
1.78 (0.070)
0.99 (0.390)
2.54 (0.100)
Nom.
1.02 (0.040)
0.38 (0.015)
5.08 (0.200)
Nom.
Pin 1 — Gate
Pin 2 — Drain
0.66 (0.026)
0.41 (0.016)
2.92 (0.115)
2.03 (0.080)
Pin 3 — Source
V_DSS
I_D(cont)
R_DS(on)
1000V
3.6A
4.00Ω
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_DSS
Drain – Source Voltage
I_D
Continuous Drain Current
I_DM
Pulsed Drain Current ¹
V_GS
Gate – Source Voltage
P_D
Total Power Dissipation @ T_case = 25°C
T_J , T_STG Operating and Storage Junction Temperature Range
T_L
Lead Temperature : 0.063” from Case for 10 Sec.
1000
V
3.6
A
14.4
A
±30
V
125
W
–55 to 150
°C
300
STATIC ELECTRICAL RATINGS (T_case = 25°C unless otherwise stated)
BV_DSS
Characteristic
Drain – Source Breakdown Voltage
Test Conditions
V_GS = 0V , I_D = 250µA
I_D(ON)
R_DS(ON)
On State Drain Current ²
Drain – Source On State Resistance ²
V_DS > I_D(ON) x R_DS(ON) Max
V_GS = 10V
V_GS =10V , I_D = 0.5 I_D [Cont.]
I_DSS
I_GSS
V_GS(TH)
Zero Gate Voltage Drain Current
(V_GS = 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
V_DS = V_DSS
V_DS = 0.8V_DSS , T_C = 125°C
V_GS = ±30V , V_DS = 0V
V_DS = V_GS , I_D = 1.0mA
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
Min.
1000
3.6
2
Typ. Max. Unit
V
A
4.00 Ω
250
µA
1000
±100 nA
4V
Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].
Prelim. 4/94