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| BFC60 Datasheet, PDF (1/1 Pages) Seme LAB – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS | |||
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SEME
BFC60
LAB
TO220âAC Package Outline.
Dimensions in mm (inches)
10.67 (0.420)
9.65 (0.380)
5.33 (0.210)
2
4.83 (0.190)
4.83 (0.190)
3.56 (0.140)
1.40 (0.020)
0.51 (0.055)
3.05 (0.120)
2.54 (1.000)
3.73 (0.147)
3.53 (0.139) Dia.
123
1.78 (0.070)
0.99 (0.390)
2.54 (0.100)
Nom.
1.02 (0.040)
0.38 (0.015)
5.08 (0.200)
Nom.
0.66 (0.026)
0.41 (0.016)
2.92 (0.115)
2.03 (0.080)
NâCHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
ISOLATED
POWER MOSFETS
VDSS
ID(cont)
RDS(on)
1500V
0.1A
140â¦
Pin 1 â Gate
Pin 2 â Drain Pin 3 â Source
ABSOLUTE MAXIMUM RATINGS (TAMB = 25°C unless otherwise stated)
VDSS
Drain â Source Voltage
ID
Continuous Drain Current
IDM
Pulsed Drain Current
VGS
Gate â Source Voltage
PD
Total Power Dissipation
TJ , TSTG Operating and Storage Junction Temperature Range
ELECTRICAL CHARACTERISTICS (TAMB = 25°C unless otherwise stated)
Characteristic
Test Conditions
BVDSS
Drain â Source Breakdown Voltage
VGS = 0V , ID = 1mA
RDS(ON)
Drain â Source On State Resistance
VGS =10V , ID = 50mA
IDSS
Zero Gate Voltage Drain Current
VDS = 1200V , VGS = 0V
IGSS
Gate â Source Leakage Current
VGS = ±20V , VDS = 0V
VGS(off)
Cutoff Voltage
VDS = 10V , ID = 1.0mA
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 20V
f = 1MHz
ton
Turnâon Time
VGS = 10V
toff
Turn-off Time
ID = 50mA
VSD
Diode Forward Voltage
VGS = 0 , IS = 0.1A
|YFS|
Forward Transfer Admittance
VDS = 20V , ID = 50mA
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
1500
V
0.1
A
0.2
A
±20
V
20
W
â55 to +150
°C
Min.
1500
1.5
50
Typ.
140
40
12
3.0
40
400
1.0
100
Max. Unit
V
200 â¦
100 µA
±100 nA
3.5 V
pF
ns
1.5 V
mS
Prelim. 2/96
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