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| BFC40 Datasheet, PDF (1/1 Pages) Seme LAB – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS | |||
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SEME
BFC40
LAB
TO247âAD Package Outline.
Dimensions in mm (inches)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
15.49 (0.610)
16.26 (0.640)
3.55 (0.140)
3.81 (0.150)
NâCHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
ISOLATED
POWER MOSFETS
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
123
1.65 (0.065)
2.13 (0.084)
2.87 (0.113)
3.12 (0.123)
1.01 (0.040)
1.40 (0.055)
5.25 (0.215)
BSC
VDSS
ID(cont)
RDS(on)
1500V
2A
8.00W
Pin 1 â Gate
Pin 2 â Drain Pin 3 â Source
ABSOLUTE MAXIMUM RATINGS (TAMB = 25°C unless otherwise stated)
VDSS
Drain â Source Voltage
1500
V
ID
Continuous Drain Current
2
A
IDM
Pulsed Drain Current
4
A
VGS
Gate â Source Voltage
±20
V
PD
Total Power Dissipation
50
W
TJ , TSTG Operating and Storage Junction Temperature Range
â55 to +150
°C
ELECTRICAL CHARACTERISTICS (TAMB = 25°C unless otherwise stated)
Characteristic
Test Conditions
BVDSS
Drain â Source Breakdown Voltage
VGS = 0V , ID = 1mA
RDS(ON) Drain â Source On State Resistance
VGS =10V , ID = 1A
IDSS
Zero Gate Voltage Drain Current
VDS = 1200V , VGS = 0V
IGSS
Gate â Source Leakage Current
VGS = ±20V , VDS = 0V
VGS(off)
Cutoff Voltage
VDS = 10V , ID = 1.0mA
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 20V
f = 1MHz
ton
Turnâon Time
VGS = 10V
toff
Turn-off Time
ID = 1A
VSD
Diode Forward Voltage
VGS = 0 , IS = 2A
|YFS|
Forward Transfer Admittance
VDS = 20V , ID = 1A
Min.
1500
1.5
1.0
Typ.
8.0
Max. Unit
V
11.0 W
100 mA
±100 nA
3.5 V
550
90
pF
30
30
ns
200
1.0 1.5 V
1.5
S
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 2/96
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