BDY25A Datasheet, PDF (1/2 Pages) Seme LAB – HIGH CURRENT NPN SILICON TRANSISTOR

BDY25A
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
1
2
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
HIGH CURRENT
NPN SILICON TRANSISTOR
FEATURES
• HIGH CURRENT FAST SWITCHING
• HIGH RELIABILITY
• SCREENING OPTIONS AVAILABLE
Pin 1 = Base
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
APPLICATIONS
• SWITCHING CIRCUITS
• LARGE SIGNAL/POWER AMPLIFIERS
TO3 (TO204AA)
Pin 2 = Emitter Case = Collector
ABSOLUTE MAXIMUM RATINGS
T_CASE = 25°C unless otherwise stated
V_CBO
Collector - Base Voltage
V_CEO
Collector - Emitter Voltage
V_EBO
I_C
Emitter – Base Voltage
Continuous Collector Current
I_B
Base Current
P_tot
Total Power Dissipation at T_case = 25°C
Derate above 25°C
T_J
Junction Temperature
T_stg
Storage Temperature
200V
140V
10V
6A
3A
50W
0.29 W/°C
200°C
-65 to 200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone [phone]. Fax [phone].
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DOC 7595, ISSUE 1