BCY71DCSM Datasheet, PDF (1/3 Pages) Seme LAB – SILICON EPITAXIAL PNP TRANSISTOR

SILICON EPITAXIAL
PNP TRANSISTOR
BCY71DCSM
• Low Current / Low Voltage Transistor
In A Dual Ceramic Hermetic Package
• Designed For General Purpose
Industrial Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
Each Side Total Device
VCBO _{Collector - Base Voltage}
-45V
VCEO _{Collector - Emitter Voltage}
-45V
VEBO _{Emitter – Base Voltage}
-5V
IC
Continuous Collector Current
-200mA
ICM
Peak Collector Current
-200mA
PD
Total Power Dissipation at ^{TA = 25°C}
350mW
500mW*
Derate Above 25°C 2mW/°C 2.9mW/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES (Each Side.)
Symbols Parameters
R_θJA
Thermal Resistance, Junction To Ambient
R_θJC
Thermal Resistance, Junction To Case
Min.
Typ. Max. Units
500 °C/W
150 °C/W
* Total device power dissipation limited by package.
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone [phone] Fax [phone] Email: [e-mail] Website: http://www.semelab.co.uk
Document Number 8108
Issue 1