BC109CSM Datasheet, PDF (1/3 Pages) Seme LAB – SILICON EPITAXIAL NPN TRANSISTOR

SILICON EPITAXIAL
NPN TRANSISTOR
BC109CSM
• Hermetic Ceramic Surface Mount Package
• Designed For Low Noise General Purpose Amplifiers,
Driver Stages and Signal Processing Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
30V
VCEO
Collector – Emitter Voltage
20V
VEBO
Emitter – Base Voltage
5V
IC
Continuous Collector Current
100mA
ICM
Peak Collector Current
200mA
PD
Total Power Dissipation at ^{TA = 25°C}
300mW
Derate Above 25°C
2mW/°C
TC = 25°C
750mW
Derate Above 25°C
5mW/°C
TJ
Junction Temperature Range
-65 to +175°C
Tstg
Storage Temperature Range
-65 to +175°C
THERMAL PROPERTIES
Symbols Parameters
R_θJA
Thermal Resistance, Junction To Ambient
R_θJC
Thermal Resistance, Junction To Case
Min.
Typ.
Max. Units
500 °C/W
200 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
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Document Number 8123
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