2SA2127 Datasheet, PDF (1/4 Pages) Seme LAB – PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

Ordering number : ENN8022
2SA2127
2SA2127 ^{PNP Epitaxial Planar Silicon Transistor}
High-Current Switching Applications
Applications
• _{Voltage regulators, relay drivers, lamp drivers, electrical equipment.}
Features
• Adoption of MBIT process.
• Low saturation voltage.
• _{High current capacity and wide ASO.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
Conditions
VCB=--40V, IE=0
VEB=--4V, IC=0
VCE=--2V, IC=--100mA
VCE=--2V, IC=--1.5A
VCE=--10V, IC=--300mA
VCB=--10V, f=1MHz
Ratings
Unit
--50
V
--50
V
--6
V
--2
A
--4
A
--400
mA
1
W
150
°C
--55 to +150
°C
min
200
40
Ratings
Unit
typ
max
--1
µA
--1
µA
560
420
MHz
16
pF
Continued on next page.
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applications that require extremely high levels of reliability, such as life-support systems, aircraft's
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any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21805EA TS IM TB-00000380 No.8022-1/4