2N7228 Datasheet, PDF (1/2 Pages) Advanced Power Technology – JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS

2N7228
MECHANICAL DATA
Dimensions in mm (inches)
3.53 (0.139)
3.78 (0.149)
Dia.
13.59 (0.535)
13.84 (0.545)
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
N–CHANNEL
POWER MOSFET
V_DSS
I_D(cont)
R_DS(on)
500V
12A
0.415Ω
123
3.81 (0.150)
BSC
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
TO–254AA – Metal Package
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
FEATURES
• HERMETICALLY SEALED ISOLATED
PACKAGE
• AVALANCHE ENERGY RATING
• SIMPLE DRIVE REQUIREMENTS
• ALSO AVAILABLE IN A SURFACE
MOUNT PACKAGE
• EASE OF PARALLELING
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_GS
Gate – Source Voltage
I_D
Continuous Drain Current
(V_GS = 10V , T_case = 25°C)
I_D
Continuous Drain Current
(V_GS = 10V , T_case = 100°C)
I_DM
Pulsed Drain Current ¹
P_D
Power Dissipation @ T_case = 25°C
Linear Derating Factor
E_AS
I_AR
E_AR
dv/dt
Single Pulse Avalanche Energy ²
Avalanche Current ¹
Repetitive Avalanche Energy ¹
Peak Diode Recovery ³
±20V
12A
8A
48A
150W
1.2W/°C
750mJ
12A
15mJ
3.5V/ns
T_J , T_stg
T_L
R_θJC
R_θCS
R_θJA
Operating and Storage Temperature Range
Lead Temperature measured ^1/16” (1.6mm) from case for 10 sec.
Thermal Resistance Junction to Case
Thermal Resistance Case to Sink (Typical)
Thermal Resistance Junction to Ambient
–55 to 150°C
300°C
0.83°C/W
0.21°C/W
48°C/W
Notes
1) Repetitive Rating – Pulse width limited by Maximum Junction Temperature
2) @ V_DD = 50V , L ≥ 9.4mH , R_G = 25Ω , Peak I_L = 12A , Starting T_J = 25°C
3) @ I_SD ≤ 12A , di/dt ≤ 130A/µs , V_DD ≤ BV_DSS , T_J ≤ 150°C , Suggested R_G = 2.35Ω
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