2N7000CSM_06 Datasheet, PDF (1/2 Pages) Seme LAB – N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

2N7000CSM
MECHANICAL DATA
Dimensions in mm (inches)
0.51 ± 0.10
(0.02 ± 0.004)
3
0.31
(0.012)
rad.
2
1
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
0.31
(0.012)
rad.
A = ^{1.02 ± 0.10}
(0.04 ± 0.004)
A
1.40
(0.055)
max.
SOT23 CERAMIC
(LCC1 PACKAGE)
Underside View
PAD 1 – Gate _{PAD 2 – Source} PAD 3 – Drain
N–CHANNEL
ENHANCEMENT MODE
MOS TRANSISTOR
FEATURES
• V_(BR)DSS = 60V
• RDS_(ON) = 5Ω
• I_D = 200mA
• Hermetic Ceramic Surface Mount
package
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25°C unless otherwise stated)
V_DS
Drain – Source Voltage
60V
V_GS
Gate – Source Voltage
±40V
I_D
Drain Current
@ T_CASE = 25°C
200mA
I_DM
Pulsed Drain Current *
500mA
P_D
Power Dissipation
@ T_CASE = 25°C
300mW
T_j
Operating Junction Temperature Range
–55 to 150°C
T_stg
Storage Temperature Range
–55 to 150°C
* Pulse width limited by maximum junction temperature.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Document Number 7022
Issue: 1