2N7000CSM Datasheet, PDF (1/2 Pages) Seme LAB – N.CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

2N7000CSM
MECHANICAL DATA
Dimensions in mm (inches)
0.51 ± 0.10
(0.02 ± 0.004)
3
0.31
(0.012)
rad.
2
1
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
0.31
(0.012)
rad.
A = ^{1.02 ± 0.10}
(0.04 ± 0.004)
A
1.40
(0.055)
max.
SOT23 CERAMIC
(LCC1 PACKAGE)
Underside View
PAD 1 – Gate _{PAD 2 – Source} PAD 3 – Drain
N–CHANNEL
ENHANCEMENT MODE
MOS TRANSISTOR
FEATURES
• V_(BR)DSS = 60V
W • RDS_(ON) = 5
• I_D = 200mA
• Hermetic Ceramic Surface Mount
package
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25°C unless otherwise stated)
V_DS
Drain – Source Voltage
60V
V_GS
Gate – Source Voltage
±40V
I_D
Drain Current
@ T_CASE = 25°C
200mA
I_DM
Pulsed Drain Current *
500mA
P_D
Power Dissipation
@ T_CASE = 25°C
300mW
T_j
Operating Junction Temperature Range
–55 to 150°C
T_stg
Storage Temperature Range
–55 to 150°C
* Pulse width limited by maximum junction temperature.
Magnatec. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Prelim. 8/00