2N6849 Datasheet, PDF (1/2 Pages) Seme LAB – P.CHANNEL POWER MOSFETs

SEME
LAB
MECHANICAL DATA
Dimensions in mm (inches)
2N6849
P–CHANNEL
POWER MOSFETs
4 .1 9 (0 .1 6 5 )
4 .9 5 (0 .1 9 5 )
8 .8 9 (0 .3 5 )
9 .4 0 (0 .3 7 )
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
1 2 .7 0
(0 .5 0 0 )
m in .
0 .8 9
(0 .0 3 5
)m
ax.
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
d ia .
5 .0 8 (0 .2 0 0 )
ty p .
0 .6 6 (0 .0 2 6 )
1 .1 4 (0 .0 4 5 )
0 .7 1 (0 .0 2 8 )
0 .8 6 (0 .0 3 4 )

!
45°
2 .5 4
(0 .1 0 0 )
TO–39 METAL PACKAGE
Underside View
Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector
V_DSS
I_D(cont)
R_DS(on)
- 100V
- 6.5A
0.30W
FEATURES
• Single pulse avalanche energy rated
• SOA is power dissipation limited
• Nanosecond switching speeds
• Linear transfer characteristics
• High input impedance
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_GS
Gate – Source Voltage*
±20V
V_DS
Drain – Source Voltage*
-100V
V_DG
Drain – Gate Voltage (R_GS = 20kW)*
-100V
I_D
Continuous Drain Current @ T_C = 25°C*
–6.5A
@ T_C = 100°C*
–4.1A
I_DM
Pulsed Drain Current^2*
–25A
E_AS
Single Pulse Avalanche Current³
500mJ
P_D
Power Dissipation
@ T_C = 25°C*
25W
Linear Derating Factor*
0.2W/°C
T_J , T_STG
R_qJC
R_qJA
Operating and Storage Junction Temperature Range*
Thermal Resistance Junction to Case*
Thermal Resistance Junction to Ambient
–55 to +150°C
5°C/W
175°C/W
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Prelim. 9/00