2N6845LCC4 Datasheet, PDF (1/2 Pages) Seme LAB – P–CHANNEL POWER MOSFET

2N6845LCC4
IRFE9120
MECHANICAL DATA
Dimensions in mm (inches)
P–CHANNEL
POWER MOSFET
1.27 (0.050)
1.07 (0.040)
11
7.62 (0.300) ¹⁰
7.12 (0.280)
9
8
9.14 (0.360)
8.64 (0.340)
12 13 14 15 16
1.39 (0.055)
1.02 (0.040)
17
18
1
2
0.76 (0.030)
0.51 (0.020)
76543
1.39 (0.055)
1.15 (0.045)
1.65 (0.065)
1.40 (0.055)
0.33
0.08
(0.013)
(0.003)
Rad.
0.43
0.18
(0.017)
(0.007
Rad.
≈ 2.16 (0.085)
GATE
DRAIN
SOURCE
LCC4
Pins 4,5
Pins1,2,15,16,17,18
Pins 6,7,8,9,10,11,12,13
V_DSS
I_D(cont)
R_DS(on)
-100V
-3.5A
0.6Ω
FEATURES
• SURFACE MOUNT
• SMALL FOOTPRINT
• HERMETICALLY SEALED
• DYNAMIC dv/dt RATING
• AVALANCHE ENERGY RATING
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_GS
Gate – Source Voltage
±20V
I_D
Continuous Drain Current
(V_GS = -10V , T_case = 25°C)
-3.5A
I_D
Continuous Drain Current (V_GS = -10V , T_case = 100°C)
-2.2A
I_DM
Pulsed Drain Current ¹
-14A
P_D
Power Dissipation @ T_case = 25°C
14W
Linear Derating Factor
0.09W/°C
E_AS
dv/dt
Single Pulse Avalanche Energy ²
Peak Diode Recovery ³
115mJ
-5.0V/ns
T_J , T_stg
Operating and Storage Temperature Range
Surface Temperature ( for 5 sec).
-55 to +150°C
300°C
Notes
1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2%
2) @ V_DD = -25V , Peak I_L = -3.5A , Starting T_J = 25°C
3) @ I_SD ≤ -3.5A , di/dt ≤ -110A/µs , V_DD ≤ BV_DSS , T_J ≤ 150°C , Suggested R_G = 7.5Ω
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 5518
Issue 1