2N6798 Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL ENHANCEMENT MODE TRANSISTOR

2N6798
MECHANICAL DATA
Dimensions in mm (inches)
6 .1 0 (0 .2 4 0 )
6 .6 0 (0 .2 6 0 )
8 .8 9 (0 .3 5 )
9 .4 0 (0 .3 7 )
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
1 2 .7 0
(0 .5 0 0 )
m in .
0 .8 9
(0 .0 3 5
)m
ax.
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
d ia .
5 .0 8 (0 .2 0 0 )
ty p .
0 .6 6 (0 .0 2 6 )
1 .1 4 (0 .0 4 5 )
0 .7 1 (0 .0 2 8 )
0 .8 6 (0 .0 3 4 )
2
1
3
45°
2 .5 4
(0 .1 0 0 )
TO–39 METAL PACKAGE
Underside View
PIN 1 – Source PIN 2 – Gate
PIN 3 – Drain
N-CHANNEL ENHANCEMENT
MODE TRANSISTOR
FEATURES
• V_(BR)DSS = 200V
• I_D = 5.5A
W • R_DSON = 0.40
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_DS
Drain–Source Voltage
200V
V_GS
Gate–Source Voltage
±20V
I_D
Drain Current Continuous T_C = 25°C
5.5A
T_C = 100°C
3.5A
I_DM
Drain Current Pulsed
22A
I_A
Avalanche Current
3.1A
P_D
Total Device Dissipation @ T_C = 25°C
25W
T_C = 100°C
10W
T_J , T_STG
Operating and Storage Junction Temperature Range
–55 to +150°C
THERMAL CHARACTERISTICS
R_qJC
R_qJC
T_L
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Maximum Lead Temperature 1.5mm from Case for
10 secs.
5.0°CW
175°CW
300°C
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Prelim. 6/99