2N6796 Datasheet, PDF (1/2 Pages) Seme LAB – TMOS FET TRANSISTOR N - CHANNEL

2N6796
MECHANICAL DATA
Dimensions in mm (inches)
6 .1 0 (0 .2 4 0 )
6 .6 0 (0 .2 6 0 )
8 .8 9 (0 .3 5 )
9 .4 0 (0 .3 7 )
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
1 2 .7 0
(0 .5 0 0 )
m in .
0 .8 9
(0 .0 3 5
)m
ax.
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
d ia .
5 .0 8 (0 .2 0 0 )
ty p .
0 .6 6 (0 .0 2 6 )
1 .1 4 (0 .0 4 5 )
0 .7 1 (0 .0 2 8 )
0 .8 6 (0 .0 3 4 )
2
1
3
45°
2 .5 4
(0 .1 0 0 )
TO–39 METAL PACKAGE
Underside View
PIN 1 – Source PIN 2 – Gate
PIN 3 – Drain Case
TMOS FET TRANSISTOR
N – CHANNEL
FEATURES
• V_DSS = 100V
• I_D = 8A
• R_DSON = 0.18Ω
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_DSS
V_DGR
V_GS
I_D
I_DM
P_D
Drain–Source Voltage
Drain–Gate Voltage (R_GS = 1.0mΩ)
Gate–Source Voltage
Drain Current Continuous
Drain Current Pulsed
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
100V
100V
±20V
8.0A
32A
25W
0.2W/ °CW
T_J , T_STG
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
–55 to +150°C
R_θJC
R_θJC
T_L
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Maximum Lead Temperature 1.5mm from Case for
10 s
5.0°CW
175°CW
300°C
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Prelim. 11/98