2N6794_01 Datasheet, PDF (1/2 Pages) Seme LAB – N–CHANNEL ENHANCEMENT MODE POWER MOSFET

2N6794
MECHANICAL DATA
Dimensions in mm (inches)
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
4.06 (0.16)
4.57 (0.18)
N–CHANNEL ENHANCEMENT
MODE POWER MOSFET
12.70
(0.500)
min.
(00.0.8395)max.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
BV_DSS
I_D(cont)
R_DS(on)
500V
1.5
3.0Ω
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.53 (0.021)
2
1
3
2.54
(0.100)
45°
TO39 – Package (TO-205AF)
Underside View
Pin 1 – Source Pin 2 – Gate
Pin 3 – Drain
FEATURES
• AVALANCHE ENERGY RATED
• HERMETICALLY SEALED
• DYNAMIC dv/dt RATING
• SIMPLE DRIVE REQUIREMENTS
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_GS
Gate – Source Voltage
±20V
I_D
Continuous Drain Current (V_GS = 10V , T_case = 25°C)
1.5A
I_D
Continuous Drain Current (V_GS = 10V , T_case = 100°C)
I_DM
Pulsed Drain Current ¹
1A
6.5A
P_D
Power Dissipation @ T_case = 25°C
20W
Linear Derating Factor
0.16W/°C
E_AS
dv/dt
Single Pulse Avalanche Energy ²
Peak Diode Recovery ³
0.11mJ
3.5V/ns
T_J , T_stg
R_θJC
R_θJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction-to-Ambient
–55 to 150°C
6.25°C/W
175°C/W
Notes
1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2%
2) @ V_DD = 50V , L ≥ 0.100mH , R_G = 25Ω , Peak I_L = 1.5A , Starting T_J = 25°C
3) @ I_SD ≤ 1.5A , di/dt ≤ 50A/µs , V_DD ≤ BV_DSS , T_J ≤ 150°C , SUGGESTED R_G = 7.5Ω
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
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Document Number 3094
Issue: 1