2N6782_01 Datasheet, PDF (1/2 Pages) Seme LAB – N–CHANNEL POWER MOSFET ENHANCEMENT MODE

2N6782
MECHANICAL DATA
Dimensions in mm (inches)
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
4.06 (0.16)
4.57 (0.18)
N–CHANNEL
POWER MOSFET
ENHANCEMENT MODE
12.70
(0.500)
min.
(00.0.8395)max.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.53 (0.021)
2
1
3
2.54
(0.100)
APPLICATIONS
• FAST SWITCHING
• MOTOR CONTROLS
• POWER SUPPLIES
45°
TO39 Package (TO-205AF)
Underside View
Pin 1 - Source
Pin 2 - Gate
Pin 3 - Drain and Case
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_DS
Drain Source Voltage
100V
V_DGR
Drain Gate Voltage (R_GS = 1MΩ)
100V
I_{D @Tcase} = 25°C
Continuous Drain Current
3.5A
I_{D @Tcase} = 100°C
I_DM
Continuous Drain Current
Pulsed Drain Current ¹
2.25A
14A
V_GS
Gate Source Voltage
±20V
P_D@ T_case = 25°C
Maximum Power Dissipation
15W
P_D@ T_case = 100°C Maximum Power Dissipation
6W
Junction to Case
Linear Derating Factor
0.12W/°C
Junction to ambient Linear Derating Factor
0.005W/°C
T_J,Tstg
Lead Temperature
Operating and Storage Temperature Range
1”
(₁₆ from case for 10 secs)
-55 to +150°C
300°C
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 3093
Issue 1