2N6686_05 Datasheet, PDF (1/2 Pages) Seme LAB – NPN BIPOLAR MULTI-EPITAXIAL POWER TRANSISTOR

2N6686
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
Pin 1 – Base
TO3 (T0-204AA)
Pin 2 – Emitter
Case – Collector
NPN BIPOLAR
MULTI-EPITAXIAL
POWER TRANSISTOR
FEATURES
• LOW VCE(SAT)
• FAST SWITCHING
APPLICATIONS
• SUITABLE FOR POWER SUPPLIES AND
OTHER HIGH VOLTAGE SWITCHING
APPLICATIONS.
ABSOLUTE MAXIMUM RATINGS (When mounted on a suitable header)
V_CEX
Collector – Emitter Voltage (V_BE = –1.5V)
V_CEO
Collector – Emitter Voltage (I_B = 0)
V_EBO
Emitter – Base Voltage
I_C
Collector Current
I_CM
Collector Current (Peak)
I_B
Base Current
T_stg
Storage Temperature
T_j
Maximum Operating Junction Temperature
210V
160V
8V
25A
50A
8A
–65 to 200°C
200°C
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 6480
Issue 1