2N6678M3A Datasheet, PDF (1/3 Pages) Seme LAB – SILICON MULTI-EPITAXIAL NPN TRANSISTOR

SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
2N6678M3A
• High Voltage, Fast Switching.
• Hermetic TO-254AA Isolated Metal Package.
• Ideally suited for PWM Regulators, Power Supplies
and Converter Circuits
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
650V
VCEX
Collector – Emitter Voltage ^{VBE = -1.5V}
650V
VCEO
Collector – Emitter Voltage
400V
VEBO
Emitter – Base Voltage
8V
IC
Continuous Collector Current
15A
IB
Base Current
5A
PD
Total Power Dissipation at ^{TA = 25°C}
6W
Derate Above 25°C
34.3mW/°C
PD
Total Power Dissipation at ^{TC = 25°C}
175W
Derate Above 25°C
1.0W/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
R_θJA
Thermal Resistance, Junction To Ambient
R_θJC
Thermal Resistance, Junction To Case
Max.
29.16
1.0
Units
°C/W
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
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Document Number 9199
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