2N6660X Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

2N6660X
MECHANICAL DATA
Dimensions in mm (inches)
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
12.70
(0.500)
min.
0.89 _max.
(0.035)
7.75 (0.305)
8.51 (0.335)
dia.
5.08 (0.200)
typ.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2
1
3
2.54
(0.100)
45˚
TO–39 METAL PACKAGE
Underside View
PIN 1 – Source
PIN 2 – Gate
PIN 3 – Drain
CASE – Drain
N–CHANNEL
ENHANCEMENT MODE
MOS TRANSISTOR
FEATURES
• Switching Regulators
• Converters
• Motor Drivers
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25°C unless otherwise stated)
V_DS
Drain – Source Voltage
60V
V_GS
Gate – Source Voltage
±40V
I_D
Continuous Drain Current
@ T_CASE = 25°C
±1.1A
I_D
Continuous Drain Current
@ T_CASE = 100°C
±0.8A
I_DM
Pulsed Drain Current *
±3A
P_D
Power Dissipation
@ T_CASE = 25°C
6.25W
P_D
Power Dissipation
@ T_CASE = 100°C
2.5W
T_j
Operating Junction Temperature Range
–55 to 150°C
T_stg
Storage Temperature Range
T_L
Lead Temperature (¹/₁₆” from case for 10 sec.)
–55 to 150°C
300°C
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
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