2N6660CSM4_0809 Datasheet, PDF (1/2 Pages) Seme LAB – N–CHANNEL ENHANCEMENT MODE MOSFET

2N6660CSM4
MECHANICAL DATA
Dimensions in mm (inches)
5.59 ± 0.13
(0.22 ± 0.005)
1.40 ± 0.15
(0.055 ± 0.006)
0.25 ± 0.03
(0.01 ± 0.001)
0.23
(0.009)
rad.
3
2
4
1
0.23
(0.009)
min.
N–CHANNEL
ENHANCEMENT MODE
MOSFET
V_DSS
I_D
R_DS(on)
60V
1.0A
3.0Ω
1.02 ± 0.20
(0.04 ± 0.008)
2.03 ± 0.20
(0.08 ± 0.008)
LCC3 PACKAGE (MO-041BA)
(Underside View)
PAD 1 – DRAIN
PAD 3 – SOURCE
PAD 2 – N/C
PAD 4 – GATE
FEATURES
• Faster switching
• Low Ciss
• Integral Source-Drain Diode
• High Input Impedance and High Gain
DESCRIPTION
This enhancement-mode (normally-off) vertical DMOS FET is
ideally suited to a wide range of switching and amplifying
applications where high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Hi-Reliability Military and Space screening options available
ABSOLUTE MAXIMUM RATINGS T_CASE = 25°C unless otherwise stated
V_DS
Drain - Source Voltage
I_D
Drain Current
- Continuous (T_C = 25°C)
I_DM
Drain Current
- Pulsed (Note 1)
V_GS
Gate - Source Voltage
P_tot(1)
Total Power Dissipation at T _{mounting base} ≤ 25°C
De-rate Linearly above 25°C
60V
1.0A
3A
±20V
3.0W
0.020W/°C
P_tot(2)
T_j,T_stg
Total Power Dissipation at T_ambient ≤ 25°C
Operating and Storage Junction Temperature Range
0.5W
-55 to +175°C
THERMAL DATA
R_thj-mb
Thermal Resistance Junction – Mounting base
Max
50
°C/W
NOTES:
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width ≤ 300µS, Duty Cycle , δ 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone [phone]. Fax [phone].
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DOC 7777, ISSUE 2