2N6660C4 Datasheet, PDF (1/4 Pages) Seme LAB – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
2N6660C4
• VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0Ω
• Fast Switching
• Low Threshold Voltage (Logic Level)
• Low CISS
• Integral Source-Drain Body Diode
• Hermetic Surface Mounted Package
• High Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VDS
Drain – Source Voltage
60V
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current
TC = 25°C
1.0A
IDM
Pulsed Drain Current⁽¹⁾
3.0A
PD
Total Power Dissipation at
TC ≤ 25°C
5W
De-rate TC > 25°C
40mW/°C
PD
Total Power Dissipation at
TA ≤ 25°C
700mW
De-rate TA > 25°C
5.6mW/°C
TJ
Operating Temperature Range
-65 to +150°C
Tstg
Storage Temperature Range
-65 to +150°C
THERMAL PROPERTIES
Symbols Parameters
R_θJC
Thermal Resistance, Junction To Case
R_θJA
Thermal Resistance, Junction To Ambient
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) Pulse Width ≤ 300us, δ ≤ 2%
Min.
Typ.
Max. Units
25 °C/W
178.5 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
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Document Number 8382
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