2N6659 Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

2N6659
MECHANICAL DATA
Dimensions in mm (inches)
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
12.70
(0.500)
min.
0.89 _max.
(0.035)
7.75 (0.305)
8.51 (0.335)
dia.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
5.08 (0.200)
typ.
2
1
3
2.54
(0.100)
N–CHANNEL
ENHANCEMENT MODE
MOS TRANSISTOR
FEATURES
• Switching Regulators
• Converters
• Motor Drivers
45˚
TO–39 METAL PACKAGE
Underside View
PIN 1 – Source
PIN 3 – Drain
PIN 2 – Gate
CASE – Drain
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25°C unless otherwise stated)
V_DS
Drain – Source Voltage
35V
V_GS
Gate – Source Voltage
±20V
I_D
Drain Current
@ T_CASE = 25°C
1.4A
I_D
Drain Current
@ T_CASE = 100°C
1A
I_DM
Pulsed Drain Current *
3A
P_D
Power Dissipation
@ T_CASE = 25°C
6.25W
P_D
Power Dissipation
@ T_CASE = 100°C
2.5W
T_j
Operating Junction Temperature Range
–55 to 150°C
T_stg
Storage Temperature Range
T_L
Lead Temperature (¹/₁₆” from case for 10 sec.)
–55 to 150°C
300°C
* Pulse width limited by maximum junction temperature.
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Prelim. 4/00