2N6299SMD Datasheet, PDF (1/2 Pages) Seme LAB – COMPLEMENTARY SILICON POWER TRANSISTORS

2N6299SMD
2N6301SMD
2N6299SMD05
2N6301SMD05
MECHANICAL DATA
Dimensions in mm (inches)
0 .8 9
(0 .0 3 5 )
3 .7 0 ( 0 .1 4 6 ) ^{m in .} 3 .7 0 ( 0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
1
3
3 .6 0 (0 .1 4 2 )
M ax.
COMPLEMENTARY SILICON
POWER TRANSISTORS
2
2N6299SMD - PNP TRANSISTOR
2N6301SMD - NPN TRANSISTOR
9 .6 7 (0 .3 8 1 )
9 .3 8 (0 .3 6 9 )
1 1 .5 8 (0 .4 5 6 )
1 1 .2 8 (0 .4 4 4 )
SMD1 (TO-276AB)
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
Pad 1 – Base Pad 2 – Collector Pad 3 – Emitter
7 .5 4 (0 .2 9 6 )
0 .7 6 (0 .0 3 0 )
m in .
2 .4 1 (0 .0 9 5 )
2 .4 1 (0 .0 9 5 )
0 .1 2 7 (0 .0 0 5 )
3 .1 7 5 (0 .1 2 5 )
M ax.

!
0 .1 2 7 (0 .0 0 5 )
Designed for general purpose
amplifier and low frequency
switching applications.
FEATURES
• High DC Current Gain
• Monolithic Construction with Built-in
Base–Emitter Shunt Resistors
16 P LC S
0 .5 0 (0 .0 2 0 )
7 .2 6 (0 .2 8 6 )
0 .1 2 7 (0 .0 0 5 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
SMD05 (TO-276AA)
Pad 1 – Base Pad 2 – Collector Pad 3 – Emitter
ABSOLUTE MAXIMUM RATINGS(T_case = 25°C unless otherwise stated)
V_CEO
Collector – Emitter Voltage
80V
V_CBO
Collector – Base Voltage
80V
V_EBO
Emitter – Base Voltage
5V
I_C
Continuous Collector Current
8A
Peak
16A
I_B
Base Current
P_D
Total Dissipation @ T_C = 25°C
Derate above 25°C
120mA
75W
0.428W/°C
T_STG , T_J Operating and Storage Junction Temperature Range
–65 to +200°C
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 2660
Issue 2