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2N6295 Datasheet, PDF (1/2 Pages) Seme LAB – DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR
2N6295
MECHANICAL DATA
Dimensions in mm(inches)
3.68
(0.145) rad.
max.
3.61 (0.142)
3.86 (0.145)
rad.
6.35 (0.250)
8.64 (0.340)
DARLINGTON COMPLEMENTARY
SILICON POWER TRANSISTOR
FEATURES
• LOWVCE(SAT)
• HIGH CURRENT
4.83 (0.190)
5.33 (0.210)
9.14 (0.360)
min.
1.27 (0.050)
1.91 (0.750)
PIN 1 — Base
TO–66
PIN 2 — Emitter
Case is Collector.
APPLICATIONS
• GENERAL PURPOSE AMPLIFIER
• LOW FREQUENCY SWITCHING
• HAMMER DRIVER APPLICATIONS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCEO
Collector – Emitter Voltage
VCB
Collector – Base Voltage
VEB
Emitter – Base Voltage
IC
Collector Current – Continuous
Peak
IB
Base Current
PD
Total Power Dissipation at Tcase = 25°C
Derate above 25°C
Tj,Tstg,
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
RθJC
Thermal Resistance, Junction to Case
80V
80V
5V
4A
8A
80mA
50W
0.286 W/°C
–65 to 200°C
3.5 °C/W
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