2N6277_09 Datasheet, PDF (1/3 Pages) Seme LAB – SILICON MULTI-EPITAXIAL NPN TRANSISTOR

SILICON MULTI-EPITAXIAL
NPN TRANSISTOR
2N6277
• High VCEO.
• High DC Current Gain, hFE.
• Low Collector-Emitter Saturation Voltage, VCE(sat).
• Fast Switching.
• Hermetic TO3 Metal package.
• Ideally suited for Power Amplifier and Switching Applications.
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
180V
VCEO
Collector – Emitter Voltage
150V
VEBO
Emitter – Base Voltage
6V
IC
Continuous Collector Current
50A
ICM
Peak Collector Current
100A
IB
Base Current
20A
PD
Total Power Dissipation at ^{TC = 25°C}
250W
Derate Above 25°C
1.43W/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
R_θJC
Thermal Resistance, Junction To Case
Min. Typ. Max. Units
0.7 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
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Document Number 8537
Issue 1
Page 1 of 3