2N6261 Datasheet, PDF (1/2 Pages) Seme LAB – HOMETAXIAL-BASE MEDIUM POWER SILICON NPN TRANSISTOR

2N6261
MECHANICAL DATA
Dimensions in mm(inches)
3.68
(0.145) rad.
max.
3.61 (0.142)
3.86 (0.145)
rad.
6.35 (0.250)
8.64 (0.340)
4.83 (0.190)
5.33 (0.210)
9.14 (0.360)
min.
1.27 (0.050)
1.91 (0.750)
PIN 1 — Base
TO–66
PIN 2 — Emitter
Case is Collector.
HOMETAXIAL-BASE
MEDIUM POWER SILICON
NPN TRANSISTOR
FEATURES
• f_T = 800 kHz at 0.2A
• Maximum Safe-area of operation curves
for dc and pulse operation.
• V_CEV(sus) = 90V min
• Low Saturation Voltage:
V_{CE(sat = 1.0V at} I_{C = 0.5A)}
APPLICATIONS
• Power Switching Circuits
• Series and shunt-regulator driver and
output stages
• High-fidelity amplifers
• Solenoid Drivers
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CBO
V_CEO
V_CER(sus)
V_CEV(sus)
V_EBO
IC
Collector – Base Voltage
Collector – Emitter Voltage (with base open)
External Base – Emitter (RBE) = 100W)
Collector – Emitter Voltage (with base reverse biased)
Emitter to Base Voltage
Continuous Collector Current
I_B
Continuous Base Current
P_D
Total Power Dissipation at Tcase = 25°C
Derate above 25°C
T_j,Tstg,
Operating and Storage Junction Temperature Range
In accordance with JEDEC registration data format
90V
80V
85V
90V
7V
4A
2A
50W
0.200°C
–65 to 200°C
THERMAL CHARACTERISTICS
RqJC
Thermal Resistance, Junction to Case
3.5 °C/W
Semelab plc. Telephone [phone]. Fax [phone].
7/00
E-mail: [e-mail] Website: http://www.semelab.co.uk