2N6032 Datasheet, PDF (1/1 Pages) GE Solid State – HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTORS

2N6032
Dimensions in mm (inches).
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
Bipolar NPN Device in a
Hermetically sealed TO3
Metal Package.
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
1 – Base
TO3 (TO204AA)
PINOUTS
2 – Emitter Case - Collector
Bipolar NPN Device.
V_CEO = 90V
I_C = 50A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications.
Parameter
V_CEO*
I_C(CONT)
h_FE
f_t
P_D
Test Conditions
@ 2.6/50 (V_CE / I_C)
* Maximum Working Voltage
Min.
10
Typ.
50M
Max.
90
50
50
140
Units
V
A
-
Hz
W
This is a shortform datasheet. For a full datasheet please contact [e-mail].
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab plc.
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Generated
31-Jul-02