2N5883 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(25A,200W)

SILICON EPITAXIAL
PNP TRANSISTOR
2N5883
• High Voltage, Low Saturation Voltages.
• Hermetic TO3 Metal Package.
• Designed For Power Switching
and Linear Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
-60V
VCEO
Collector – Emitter Voltage
-60V
VEBO
Emitter – Base Voltage
-5V
IC
Continuous Collector Current
-25A
ICM
Peak Collector Current
-50A
IB
Base Current
-7.5A
PD
Total Power Dissipation at ^{TC = 25°C}
200W
Derate Above 25°C
1.14W/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
R_θJC
Thermal Resistance, Junction To Case
Max.
0.875
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
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Document Number 5981
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