2N5786_02 Datasheet, PDF (1/2 Pages) Seme LAB – SILICON EPITAXIAL NPN TRANSISTOR

2N5786
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
(00.0.8395)max.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2
1
3
2.54
(0.100)
45°
TO39 PACKAGE (TO-205AD)
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
SILICON EPITAXIAL
NPN TRANSISTOR
FEATURES
General purpose power transistor for
switching and linear applications in a
hermetic TO–39 package.
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage
V_CER(sus) Collector – Emitter Sustaining Voltage R_BE = 100Ω
V_CEO(sus) Collector – Emitter Sustaining Voltage
V_EBO
Emitter – Base Voltage
I_C
Continuous Collector Current
I_B
Continuous Collector Current
P_D
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
Total Device Dissipation
T_C = 25°C
Derate above 25°C
T_J , T_STG
T_L
Operating Junction and Storage Temperature Range
Lead temperature, ≥ ¹/₃₂” (0.8mm) from seating plane for 10 s max.
45V
45V
40V
3.5V
3.5A
1A
1W
0.0057W/°C
10W
0.057W/°C
–65 to +200°C
230°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 3079
Issue: 1