2N5786 Datasheet, PDF (1/2 Pages) Seme LAB – SILICON EPITAXIAL NPN TRANSISTOR

2N5786
MECHANICAL DATA
Dimensions in mm (inches)
8 .8 9 (0 .3 5 )
9 .4 0 (0 .3 7 )
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
6 .1 0 (0 .2 4 0 )
6 .6 0 (0 .2 6 0 )
1 2 .7 0
(0 .5 0 0 )
m in .
(
0 .8 9
0 .0 3 5
)m
ax.
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
d ia .
5 .0 8 (0 .2 0 0 )
ty p .
0 .6 6 (0 .0 2 6 )
1 .1 4 (0 .0 4 5 )
0 .7 1 (0 .0 2 8 )
0 .8 6 (0 .0 3 4 )
2
1
3
2 .5 4
(0 .1 0 0 )
45°
TO39 PACKAGE
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
SILICON EPITAXIAL
NPN TRANSISTOR
FEATURES
General purpose power transistor for
switching and linear applications in a
hermetic TO–39 package.
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage
W V_CER(sus) Collector – Emitter Sustaining Voltage R_BE = 100
V_CEO(sus) Collector – Emitter Sustaining Voltage
V_EBO
Emitter – Base Voltage
I_C
Continuous Collector Current
I_B
Continuous Collector Current
P_D
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
Total Device Dissipation
T_C = 25°C
Derate above 25°C
T_J , T_STG
T_L
Operating Junction and Storage Temperature Range
³ Lead temperature, ¹/₃₂” (0.8mm) from seating plane for 10 s max.
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45V
45V
40V
3.5V
3.5A
1A
10W
0.057W/°C
1W
0.0057W/°C
–65 to +200°C
230°C
Prelim. 8/96