2N5784 Datasheet, PDF (1/2 Pages) Seme LAB – SILICON EPITAXIAL NPN TRANSISTOR

2N5784
MECHANICAL DATA
Dimensions in mm (inches)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
4.19 (0.165)
4.95 (0.195)
12.70
(0.500)
min.
0.89 _max.
(0.035)
7.75 (0.305)
8.51 (0.335)
dia.
5.08 (0.200)
typ.
SILICON EPITAXIAL
NPN TRANSISTOR
FEATURES
General purpose power transistor for
switching and linear applications in a
hermetic TO–39 package.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2
1
3
2.54
(0.100)
45˚
TO–39 PACKAGE
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage
W V_CER(sus) Collector – Emitter Sustaining Voltage R_BE = 100
V_CEO(sus) Collector – Emitter Sustaining Voltage
V_EBO
Emitter – Base Voltage
I_C
Continuous Collector Current
I_B
Continuous Collector Current
P_D
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
Total Device Dissipation
T_C = 25°C
Derate above 25°C
T_J , T_STG
T_L
Operating Junction and Storage Temperature Range
³ Lead temperature, ¹/₃₂” (0.8mm) from seating plane for 10 s max.
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80V
80V
65V
5V
3.5A
1A
10W
0.057W/°C
1W
0.0057W/°C
–65 to +200°C
230°C
Prelim. 8/96