2N5781_06 Datasheet, PDF (1/2 Pages) Seme LAB – SILICON EPITAXIAL PNP TRANSISTOR

2N5781
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
SILICON EPITAXIAL
PNP TRANSISTOR
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
(00.0.8395)max.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2
1
3
2.54
(0.100)
45°
TO39 (TO205AD) Package
PIN 1 – Emitter PIN 2 – Base
PIN 3 – Case
General-Purpose types for Switching
and Linear-Amplifier Applications
FEATURES
• Low saturation voltages
• Maximum Safe area of operation curves
• High gain at high current
• High breakdown voltages
The 2N5781 is intended for medium-power
switching and complementary-symmetry
audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage
V_CER(BR) Collector – Emitter Breakdown Voltage R_BE = 100Ω
V_CEO(BR) Collector – Emitter Breakdown Voltage
V_EBO
Emitter – Base Voltage
I_C
Continuous Collector Current
I_B
Continuous Base Current
P_T
Total Device Dissipation At Case Temperatures up to = 25°C
At Ambient Temperatures up to = 25°C
T_J , T_STG Operating Junction and Storage Temperature Range
-80V
-80V
-65V
-5V
-3.5A
-1A
10W
1W
–65 to +200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Document Number 6659
Issue 1