2N5679 Datasheet, PDF (1/2 Pages) Seme LAB – PNP SILICON TRANSISTORS

SEME
LAB
MECHANICAL DATA
Dimensions in mm (inches)
2N5679
2N5680
PNP SILICON
TRANSISTORS
6 .1 0 (0 .2 4 0 )
6 .6 0 (0 .2 6 0 )
8 .8 9 (0 .3 5 )
9 .4 0 (0 .3 7 )
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
1 2 .7 0
(0 .5 0 0 )
m in .
0 .8 9
(0 .0 3 5
)m
ax.
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
d ia .
5 .0 8 (0 .2 0 0 )
ty p .
0 .6 6 (0 .0 2 6 )
1 .1 4 (0 .0 4 5 )
0 .7 1 (0 .0 2 8 )
0 .8 6 (0 .0 3 4 )

!
45°
DESCRIPTION
The 2N5679 and 2N5680 are silicon
expitaxial planar PNP transistors in
2 .5 4
(0 .1 0 0 )
jedec TO-39 metal case intended for
use as drivers for high power transis-
tors in general purpose, amplifier and
switching circuit
The complementary NPN types are the
2N5681 and 2N5682 respectively
Pin 1 – Emitter
TO-39
Pin 2 – Base
Pin 3 – Collector
ABSOLUTE MAXIMUM RATINGS
T_CASE = 25°c unless otherwise stated
V_CBO
Collector – Base Voltage
V_CEO
Collector – Emitter Voltage (I_B = 0)
V_EBO
Emitter – Base Voltage (I_C = 0)
I_C
Continuous Collector Current
I_B
Base Current
P_tot
Total Dissipation at T_case £ 25°C
T_amb £ 25°C
T_stg
Operating and Storage Temperature Range
T_j
Junction temperature
2N5679
2N5680
-100V
-120V
-100V
-120V
-4V
-1A
-0.5A
10W
1W
–65 to +200°C
200°C
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Prelim. 3/00