2N5672 Datasheet, PDF (1/2 Pages) Seme LAB – NPN HIGH POWER SILICON TRANSISTOR

2N5672
MECHANICAL DATA
Dimensions in mm (inches)
4 .0 9 (0 .1 6 1 )
3 .8 4 (0 .1 5 1 )
d ia .
2 p lc s .
3 9 .9 5 (1 .5 7 3 )
m ax.
3 0 .4 0 (1 .1 9 7 )
3 0 .1 5 (1 .1 8 7 )
1 7 .1 5 (0 .6 7 5 )
1 6 .6 4 (0 .6 5 5 )

2 0 .3 2 (0 .8 0 0 )
1 8 .8 0 (0 .7 4 0 )
d ia .
1 .5 7 (0 .0 6 2 )
1 .4 7 (0 .0 5 8 )
d ia .
2 p lc s .
NPN HIGH POWER
SILICON TRANSISTOR
Features
• High Current & High Speed Switching
• High Reliability Screening Options
Available Including:-
• Semelab Space Level discrete component
processing which is based on conformance &
screening levels of MIL-PRF-19500 & ESCC 5000
Applications
For high reliability general purpose
applications, where high speed & high
current switching and amplification is
required.
TO-3 (TO-204AE)
Pin 1 – Base Pin 2 – Emitter Case – Collector
ABSOLUTE MAXIMUM RATINGS
T_CASE = 25°C unless otherwise stated
V_CBO
Collector - Base Voltage
V_CEO
Collector - Emitter Voltage (I_B = 0)
V_EBO
Emitter – Base Voltage (I_C = 0)
I_C
Continuous Collector Current
I_B
Base Current
P_tot
Total Power Dissipation at T_case ≤ 25°C
T_amb ≤ 25°C
T_stg
Operating and Storage Temperature Range
T_j
Junction Temperature
150V
120V
7.0V
30A
10A
140W
6W
-65 to +200°C
200°C
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both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
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DOC 7506, ISSUE 2