2N5665N1 Datasheet, PDF (1/3 Pages) Seme LAB – NPN POWER SILICON SWITCHING TRANSISTOR

NPN POWER SILICON
SWITCHING TRANSISTOR
2N5665N1
• Hermetic SMD0.5 Ceramic Surface Mount.
• Ideally Suited for Power Amplifier and Switching Applications.
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
400V
VCEO
Collector – Emitter Voltage
300V
VEBO
Emitter – Base Voltage
6V
IC
Continuous Collector Current
5A
IB
Base Current
1.0A
PD
Total Power Dissipation at ^{TC = 25°C}
76W
Derate Above 25°C
0.43W/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
R_θJC
Thermal Resistance, Junction To Case - TC = 25°C
Min. Typ. Max. Units
2.3 °C/W
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Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
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