2N5663_10 Datasheet, PDF (1/3 Pages) Seme LAB – SILICON POWER NPN TRANSISTOR

SILICON POWER
NPN TRANSISTOR
2N5663
• Fast Switching Transistor
• Hermetic TO-5 Metal Package
• Applications include High Speed Switching Circuits
and Power Amplifiers
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
400V
VCER
Collector – Emitter Voltage
400V
VCEO
Collector – Emitter Voltage
300V
VEBO
Emitter – Base Voltage
6V
IB
Base Current
0.5A
IC
Continuous Collector Current
2A
PD
Total Power Dissipation at ^{Tc = 25°C}
17.5W
Derate above 25°C
100mW/°C
PD
Total Power Dissipation at ^T_A ^{= 25°C}
1.0W
Derate above 25°C
5.7mW/°C
TJ
Operating Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
R_θJC
Thermal Resistance, Junction To Case
R_θJA
Thermal Resistance, Junction To Ambient
Max
10.0
175.0
Units
°C/W
°C/W
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Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
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Document Number 8761
Issue 1
Page 1 of 3