2N5154T2A Datasheet, PDF (1/3 Pages) Seme LAB – SILICON EPITAXIAL NPN TRANSISTOR

SILICON EPITAXIAL
NPN TRANSISTOR
2N5154T2A
• Hermetic Metal TO39 Package
• High Reliability and Space Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage (IE = 0)
100V
VCEO
Collector – Emitter Voltage (IB = 0)
80V
VEBO
Emitter – Base Voltage
5.5V
IC
Continuous Collector Current
2A
ICM
Peak Collector Current ⁽¹⁾
10A
PD
Total Power Dissipation at ^{TA = 25°C}
1W
Derate Above 25°C
5.71mW/°C
PD
Total Power Dissipation at ^{TC = 50°C}
10W
Derate Above 50°C
66.67mW/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
R_θJC
Thermal Resistance, Junction To Case
R_θJA
Thermal Resistance, Junction To Ambient
Min.
Typ.
Max. Units
15 °C/W
175 °C/W
(1)
This value applies for Pw ≤ 8.3ms, duty cycle ≤ 1%.
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone [phone] Fax [phone] Email: [e-mail]
Document Number 9306
Website: http://www.semelab-tt.com
Issue 1
Page 1 of 3