2N5015X Datasheet, PDF (1/2 Pages) Seme LAB – HIGH VOLTAGE SILICON EPITAXIAL NPN TRANSISTOR

2N5015X
2N5015SX
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
HIGH VOLTAGE
SILICON EPITAXIAL
NPN TRANSISTOR
38.00
(1.5)
min.
(00.0.8395)max.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2
1
3
45°
2.54
(0.100)
FEATURES
• SILICON PLANAR EPITAXIAL NPN TRANSISTOR
• HIGH BREAKDOWN VOLTAGE
• LOW SATURATION VOLTAGE
• HERMETIC TO5 or TO39 (‘S’ Suffix) PACKAGE
• HI-RELIABILITY SCREENING OPTIONS AVAILABLE
APPLICATIONS
For high reliability general purpose high voltage switching
and linear applications requiring small size and low weight
devices.
TO5 (TO-205AA)
PIN 1 – Emitter
Underside View
PIN 2 – Base
PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS T_CASE = 25°C unless otherwise stated
V_CBO
V_CER
V_EBO
I_C
P_tot
T T _{stg, J}
Collector - Base Voltage
Collector - Emitter Voltage (R_BE = 1.0KΩ)
Emitter – Base Voltage
Continuous Collector Current
Total Power Dissipation
T_case = 50°C
De-rate Linearly
T_case > 50°C
Operating and Storage Temperature Range
1000V
1000V
5V
0.5A
2W
20mW/°C
-55 to +150°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
DOC 7996 issue 1