2N5014_01 Datasheet, PDF (1/1 Pages) Seme LAB – SILICON EPITAXIAL NPN TRANSISTOR

2N5014
MECHANICAL DATA
Dimensions in mm (inches)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
SILICON EPITAXIAL
NPN TRANSISTOR
12.70
(0.500)
min.
(00..08395)max.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
FEATURES
General purpose power transistor for
switching and linear applications in a
hermetic TO–39 package.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2
1
3
2.54
(0.100)
45°
TO–39 PACKAGE
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise stated)
V_CBO
V_CER
V_EBO
I_C
P_TOT
T_J
T_STG
Collector – Base Voltage
Collector – Emitter Voltage
R = 10Ω
Emitter – Base Reverse Voltage
Continuous Collector Current
Total Device Dissipation
T_C = 25°C
Maximum Operating Junction Temperature
and Storage Temperature Range
900V
900V
5V
2W
3.5A
200°C
-55 to 200°C
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise stated)
Parameter
Test Conditions
Min. Typ. Max. Unit
I_CBO
hFE
fae
Collector Base Leakage Current
D.C Current Gain
V_CB = 900V
V_CE = 10V
I_C =0.02A
0.012 ^mA
20
180 ^—
20
MHz
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 3070
Issue 1