2N5014 Datasheet, PDF (1/1 Pages) Seme LAB – SILICON EPITAXIAL NPN TRANSISTOR

2N5014
MECHANICAL DATA
Dimensions in mm (inches)
8 .8 9 (0 .3 5 )
9 .4 0 (0 .3 7 )
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
6 .1 0 (0 .2 4 0 )
6 .6 0 (0 .2 6 0 )
SILICON EPITAXIAL
NPN TRANSISTOR
1 2 .7 0
(0 .5 0 0 )
m in .
0 .8 9
(0 .0 3 5
)m
ax.
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
d ia .
5 .0 8 (0 .2 0 0 )
ty p .
FEATURES
General purpose power transistor for switch-
ing and linear applications in a hermetic
TO–39 package.
0 .6 6 (0 .0 2 6 )
1 .1 4 (0 .0 4 5 )
0 .7 1 (0 .0 2 8 )
0 .8 6 (0 .0 3 4 )
2
1
3
2 .5 4
(0 .1 0 0 )
45°
TO–39 PACKAGE
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise stated)
V_CBO
V_CER
V_EBO
I_C
P_TOT
T_J
T_STG
Collector – Base Voltage
Collector – Emitter Voltage
R = 10W
Emitter – Base Reverse Voltage
Continuous Collector Current
Total Device Dissipation
T_C = 25°C
Maximum Operating Junction Temperature
and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise stated)
Parameter
Test Conditions
I_CBO
hFE
fae
Collector Base Leakage Current
D.C Current Gain
V_CB = 900V
V_CE = 10V
I_C =0.02A
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900V
900V
5V
2W
3.5A
200°C
-55 to 200°C
Min.
20
Typ.
20
Max.
0.012
180
Unit
mA
—
MHz
Prelim. 8/96