2N3700 Datasheet, PDF (1/3 Pages) STMicroelectronics – GENERAL PURPOSE AMPLIFIERS

SILICON NPN TRANSISTOR
2N3700
• High Voltage, Medium Power Silicon Planar NPN Transistor
• Hermetic TO18 Metal Package
• High Reliability Screening Options Available
• CECC and Space Quality Level Options
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO _{Collector – Base Voltage}
140V
VCEO _{Collector – Emitter Voltage}
80V
VEBO _{Emitter – Base Voltage}
7.0V
IC
Continuous Collector Current
1.0A
PD
Total Power Dissipation at ^{TA = 25°C}
0.5W
Derate Above TA = 25°C
2.9mW/°C
TC = 25°C
1.0W
Derate Above TC = 25°C
5.7mW/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
R_θJA
Thermal Resistance, Junction To Ambient
R_θJC
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
350
175
Unit
°C/W
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone [phone] Fax [phone] Email: [e-mail]
Website: http://www.semelab-tt.com
Document Number 5266
Issue 2
Page 1 of 3