2N3637 Datasheet, PDF (1/2 Pages) Seme LAB – PNP SILICON TRANSISTOR

2N3637
MECHANICAL DATA
Dimensions in mm (inches)
8 .8 9 (0 .3 5 )
9 .4 0 (0 .3 7 )
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
6 .1 0 (0 .2 4 0 )
6 .6 0 (0 .2 6 0 )
1 2 .7 0
(0 .5 0 0 )
m in .
0 .8 9
(0 .0 3 5
)m
ax.
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
d ia .
5 .0 8 (0 .2 0 0 )
ty p .
0 .6 6 (0 .0 2 6 )
1 .1 4 (0 .0 4 5 )
0 .7 1 (0 .0 2 8 )
0 .8 6 (0 .0 3 4 )
2
1
3
45°
2 .5 4
(0 .1 0 0 )
TO–39 METAL PACKAGE
Underside View
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
PNP SILICON TRANSISTOR
FEATURES
• High Voltage Switching
• Low Power Amplifier Applications
• Hermetic TO39 Package
APPLICATIONS:
• General Purpose
• High Speed Saturated Switching
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CEO
Collector – Emitter Voltage
175V
V_CBO
Collector – Base Voltage
175V
V_EBO
Emmiter – Base Voltage
5V
I_C
Collector Current
1A
P_D
Total Device Dissipation @ T_A = 25°C
1W
Derate above 25°C
5.71mW/ °C
P_D
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
5W
28.6mW / °C
T_J , T_STG
Operating and Storage Junction Temperature Range
–65 to +200°C
Semelab plc. Telephone [phone]. Fax [phone].
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Prelim. 7/99