2N3634 Datasheet, PDF (1/2 Pages) Boca Semiconductor Corporation – GENERAL PURPOSE TRANSISTOR (PNP SILICON)

2N3634
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
(00.0.8395)max.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2
1
3
2.54
(0.100)
45°
TO–39 (TO-205AD) METAL PACKAGE
Underside View
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
PNP SILICON TRANSISTOR
FEATURES
• High Voltage Switching
• Low Power Amplifier Applications
• Hermetic TO39 Package
APPLICATIONS:
• General Purpose
• High Speed Saturated Switching
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CEO
Collector – Emitter Voltage
-140V
V_CBO
Collector – Base Voltage
-140V
V_EBO
Emmiter – Base Voltage
-5V
I_C
Collector Current
-1A
P_D
Total Device Dissipation @ T_A = 25°C
1W
Derate above 25°C
5.71mW/ °C
P_D
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
5W
28.6mW / °C
T_J , T_STG
Operating and Storage Junction Temperature Range
–65 to +200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 7744
Issue 1