2N3553 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Silicon planar epitaxial overlay transistor

2N3553
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
(00.0.8395)max.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2
1
3
2.54
(0.100)
45°
TO-39 (TO - 205AD)
Pin 1 – Emitter
Pin 2 – Base Pin 3 – Collector
NPN SILICON HIGH
FREQUENCY TRANSISTOR
APPLICATIONS
The 2N3553 is designed for amplifier and
oscillator applications in military and
industrial equipment. Suitable for use as
output, driver or pre-driver stages in VHF
equipment.
FEATURES
• Fast Switching
• Low Leakage Current
ABSOLUTE MAXIMUM RATINGS(T_A = 25°c unless otherwise stated)
V_CEO
Collector – Emitter Voltage
V_CBO
Collector – Base Voltage
V_EBO
Emitter – Base Voltage
I_C
Continuous Collector Current
P_D
Total Device Disipation @ T_Case = 25°C
Derate above 25°C
T_j , T_stg
Operating and Storage Junction Temperature Range
40V
65V
4.0V
1A
7W
40mW/°C
–65 to +200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 5619
Issue 1