2N3501CSM4 Datasheet, PDF (1/3 Pages) Seme LAB – HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

2N3501CSM4
MECHANICAL DATA
Dimensions in mm (inches)
HIGH VOLTAGE, MEDIUM POWER, NPN
TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
5.59 ± 0.13
(0.22 ± 0.005)
3
4
1.02 ± 0.20
(0.04 ± 0.008)
2
1
2.03 ± 0.20
(0.08 ± 0.008)
1.40 ± 0.15
(0.055 ± 0.006)
0.25 ± 0.03
(0.01 ± 0.001)
0.23
(0.009)
rad.
0.23
(0.009)
min.
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
• HIGH VOLTAGE
LCC3 PACKAGE
Underside View
PAD 1 – Collector
PAD 2 – N/C
PAD 3 – Emitter
PAD 4 – Base
APPLICATIONS:
Hermetically sealed surface mount version of
the popular 2N3501 for high reliability / space
applications requiring small size and low
weight devices.
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage
150V
V_CEO
Collector – Emitter Voltage (I_B = 0)
150V
V_EBO
Emitter – Base Voltage (I_B = 0)
6V
I_C
Collector Current
300mA
P_D
Total Device Dissipation T_A = 25 °C
500mW
P_D
Derate above 25°C
2.85mW / °C
T_stg
Storage Temperature
–65 to 200°C
R_ja
Thermal Resistance Junction to Ambient
350°C/W
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Website http://www.semelab.co.uk
Prelim. 12/98