2N3501 Datasheet, PDF (1/3 Pages) Microsemi Corporation – NPN BIPOLAR TRANSISTOR

2N3501
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
NPN SILICON TRANSISTOR
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
(00.0.8395)max.
0.41 (0.016)
0.53 (0.021)
dia.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
5.08 (0.200)
typ.
2
1
3
2.54
(0.100)
FEATURES
• NPN High Voltage Planar Transistor
• Hermetic TO39 Package
• Full Screening Options Available
45°
TO39 PACKAGE
Underside View
Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_CBO
Collector – Base Voltage
150V
V_CEO
Collector – Emitter Voltage (I_B = 0)
150V
V_EBO
Emitter – Base Voltage (I_B = 0)
6V
I_C
Collector Current
300mA
P_D
Total Device Dissipation T_A = 25 °C
1W
P_D
Derate above 25°C
5.71mW / °C
T_stg
Storage Temperature
–65 to 200°C
R_ja
Thermal Resistance Junction to Ambient
175°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Document Number 5974
Issue 1