2N3440C3 Datasheet, PDF (1/3 Pages) Seme LAB – SILICON PLANAR EPITAXIAL NPN TRANSISTOR

SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N3440C3
• High Voltage
• Hermetic Ceramic Surface Mount Package.
• Ideally suited for drivers in high-voltage low current
inverters, switching and series regulators.
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
300V
VCEO
Collector – Emitter Voltage
250V
VEBO
Emitter – Base Voltage
7V
IC
Collector Current – Continuous
1.0A
IB
Base Current
0.5A
PD
Total Power Dissipation at ^{TA = 25°C}
500mW
Derate Above 25°C
2.9mW/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
R_θJA
Thermal Resistance, Junction To Ambient
R_θJSP
Thermal Resistance, Junction To Solder Pads
Min.
Typ.
Max. Units
350 °C/W
120 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
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Document Number 8877
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