2N3439_02 Datasheet, PDF (1/2 Pages) Seme LAB – HIGH VOLTAGE NPN TRANSISTORS

2N3439
2N3440
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
(00.0.8395)max.
0.41 (0.016)
0.53 (0.021)
dia.
HIGH VOLTAGE
NPN TRANSISTORS
FEATURES
• DUAL SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• HIGH VOLTAGE
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
5.08 (0.200)
typ.
2
1
3
2.54
(0.100)
APPLICATIONS:
These devices are particularly suited as
drivers in high-voltage low current inverters,
switching and series regulators.
45°
TO39 PACKAGE (TO-205AD)
Pin 1 = Emitter
Pin 2 = Base Pin 3 = Collector
ABSOLUTE MAXIMUM RATINGS(T_case = 25°C unless otherwise stated)
V_CBO
V_CEO
V_EBO
I_C
I_B
P_tot
T_stg
T_j
Collector – Base Voltage (I_E = 0)
Collector – Emitter Voltage (I_B = 0)
Emitter – Base Voltage (I_C = 0)
Collector Current
Base Current
Total Power Dissipation at T_case ≤ 25°C
T_amb ≤ 50°C
Storage Temperature
Junction Temperature
2N3439
2N3440
450V
300V
350V
250V
7V
1A
0.5A
5W
1W
–65 to 200°C
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is
believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in
its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Document Number 3066
Issue: 1