2N3439 Datasheet, PDF (1/2 Pages) STMicroelectronics – SILICON NPN TRANSISTORS

2N3439
2N3440
MECHANICAL DATA
Dimensions in mm (inches)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
4.19 (0.165)
4.95 (0.195)
12.70
(0.500)
min.
0.89 _max.
(0.035)
7.75 (0.305)
8.51 (0.335)
dia.
HIGH VOLTAGE
NPN TRANSISTORS
FEATURES
• DUAL SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• HIGH VOLTAGE
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
5.08 (0.200)
typ.
2
1
3
2.54
(0.100)
APPLICATIONS:
These devices are particularly suited as dri-
vers in high-voltage low current inverters,
switing and series regulators.
45˚
TO39 PACKAGE
Pin 1 = Emitter
Pin 2 = Base Pin 3 = Collector
ABSOLUTE MAXIMUM RATINGS
(T_case = 25°C unless otherwise stated)
V_CBO
V_CEO
V_EBO
I_C
I_B
P_tot
T_stg
T_j
Collector – Base Voltage (I_E = 0)
Collector – Emitter Voltage (I_B = 0)
Emitter – Base Voltage (I_C = 0)
Collector Current
Base Current
Total Power Dissipation at T_case £ 25°C
T_amb £ 50°C
Storage Temperature
Junction Temperature
2N3439
2N3440
450V
300V
350V
250V
7V
1A
0.5A
5W
1W
–55 to 200°C
200°C
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Prelim.12/99